Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

The schematic of the RRAM device of HfO 2 /TiO 2 /HfO 2

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered

TEM image of Cr/CrO x /TiO x /TiN RRAM device with a via-hole size

a) Comparison of the 50 Â 50 nm 2 device and the sub-10 nm tip

Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short

HfO2-Based RRAM with In Situ Conductive Channels Induced by

a) The endurance and (b) the retention characteristics of the

Metals, Free Full-Text

The endurance (switching cycles) of the ZrO2 stack RRAM for (a) dc

Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

Frontiers Harnessing Conductive Oxide Interfaces for Resistive